Electrical characterisation of GaN-based metal semiconductor contacts
Gallium nitride (GaN) based Schottky diodes with different contact diameters of 0.8mm, 1.0mm and 1.3mm have been made by physical wafer deposition of (Electron-Beam) metal contacts onto a gallium nitride silicon wafer. The Schottky metal contacts were deposited on a GaN-based High Electron Mobili...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/40738 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Gallium nitride (GaN) based Schottky diodes with different contact diameters of
0.8mm, 1.0mm and 1.3mm have been made by physical wafer deposition of
(Electron-Beam) metal contacts onto a gallium nitride silicon wafer. The Schottky
metal contacts were deposited on a GaN-based High Electron Mobility Transistor
(HEMT) structure.
In this project, the Current-voltage (I-V) and capacitance-voltage (C-V)
characteristics will be obtained using the characterization systems in the III-V clean
room. Using the results, important parameters such as the Schottky barrier height
will be analysed and discussed.
Also, with the new mercury probe C-V characterization system, a step-by-step
process on how to use the software will be included in this report. A short
introduction to the graphical interface software, ORIGIN, will also be included. |
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