Electrical characterisation of GaN-based metal semiconductor contacts

• Main Author: Lee, Kenneth Jia De.
• Other Authors: K Radhakrishnan
• Format: Final Year Project
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/40738
• Institution: Nanyang Technological University

Gallium nitride (GaN) based Schottky diodes with different contact diameters of 0.8mm, 1.0mm and 1.3mm have been made by physical wafer deposition of (Electron-Beam) metal contacts onto a gallium nitride silicon wafer. The Schottky metal contacts were deposited on a GaN-based High Electron Mobility Transistor (HEMT) structure. In this project, the Current-voltage (I-V) and capacitance-voltage (C-V) characteristics will be obtained using the characterization systems in the III-V clean room. Using the results, important parameters such as the Schottky barrier height will be analysed and discussed. Also, with the new mercury probe C-V characterization system, a step-by-step process on how to use the software will be included in this report. A short introduction to the graphical interface software, ORIGIN, will also be included.