Electrical characterisation of GaN-based metal semiconductor contacts

• Main Author: Lee, Kenneth Jia De.
• Other Authors: K Radhakrishnan
• Format: Final Year Project
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/40738
• Institution: Nanyang Technological University

Gallium nitride (GaN) based Schottky diodes with different contact diameters of 0.8mm, 1.0mm and 1.3mm have been made by physical wafer deposition of (Electron-Beam) metal contacts onto a gallium nitride silicon wafer. The Schottky metal contacts were deposited on a GaN-based High Electron Mobili...