Improved effective channel length extraction method for 0.09-0.13 mm CMOS
This work involves the detailed study and understanding of physical limits and shortcoming of existing electrical parameter extraction methodology i.e. effective channel length (Leff) extraction. This work not only improves and overcomes the limit of an existing Leff extraction method. In fact, an o...
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | https://hdl.handle.net/10356/4118 |
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| Institution: | Nanyang Technological University |
| Summary: | This work involves the detailed study and understanding of physical limits and shortcoming of existing electrical parameter extraction methodology i.e. effective channel length (Leff) extraction. This work not only improves and overcomes the limit of an existing Leff extraction method. In fact, an original and new method of Leff extraction has been developed through the discovery of new device physics for state-of-the-art metal-oxide-semiconductor field-effect-transistors (MOSFETs) with ultra-thin gate oxide (? 2 nm). |
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