Improved effective channel length extraction method for 0.09-0.13 mm CMOS

Improved effective channel length extraction method for 0.09-0.13 mm CMOS

This work involves the detailed study and understanding of physical limits and shortcoming of existing electrical parameter extraction methodology i.e. effective channel length (Leff) extraction. This work not only improves and overcomes the limit of an existing Leff extraction method. In fact, an o...

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Main Author: Eng, Chee Wee
Other Authors: Lau Wai Shing
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:https://hdl.handle.net/10356/4118
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-41182023-07-04T17:17:00Z Improved effective channel length extraction method for 0.09-0.13 mm CMOS Eng, Chee Wee Lau Wai Shing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits This work involves the detailed study and understanding of physical limits and shortcoming of existing electrical parameter extraction methodology i.e. effective channel length (Leff) extraction. This work not only improves and overcomes the limit of an existing Leff extraction method. In fact, an original and new method of Leff extraction has been developed through the discovery of new device physics for state-of-the-art metal-oxide-semiconductor field-effect-transistors (MOSFETs) with ultra-thin gate oxide (? 2 nm). DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:44:54Z 2008-09-17T09:44:54Z 2008 2008 Thesis Eng, C. W. (2008). Improved effective channel length extraction method for 0.09-0.13 mm CMOS. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/4118 10.32657/10356/4118 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Eng, Chee Wee
Improved effective channel length extraction method for 0.09-0.13 mm CMOS
description This work involves the detailed study and understanding of physical limits and shortcoming of existing electrical parameter extraction methodology i.e. effective channel length (Leff) extraction. This work not only improves and overcomes the limit of an existing Leff extraction method. In fact, an original and new method of Leff extraction has been developed through the discovery of new device physics for state-of-the-art metal-oxide-semiconductor field-effect-transistors (MOSFETs) with ultra-thin gate oxide (? 2 nm).
author2 Lau Wai Shing
author_facet Lau Wai Shing
Eng, Chee Wee
format Theses and Dissertations
author Eng, Chee Wee
author_sort Eng, Chee Wee
title Improved effective channel length extraction method for 0.09-0.13 mm CMOS
title_short Improved effective channel length extraction method for 0.09-0.13 mm CMOS
title_full Improved effective channel length extraction method for 0.09-0.13 mm CMOS
title_fullStr Improved effective channel length extraction method for 0.09-0.13 mm CMOS
title_full_unstemmed Improved effective channel length extraction method for 0.09-0.13 mm CMOS
title_sort improved effective channel length extraction method for 0.09-0.13 mm cmos
publishDate 2008
url https://hdl.handle.net/10356/4118
_version_ 1772828893956276224

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