Development and characterization of deep reactive ion etching technology for through silicon interconnection
Deep reactive ion etching (DRIE) is an enabling technology for three dimensional (3D) integration of planar integrated circuits. This work focuses on various challenges associated with deep reactive ion etching technology for realizing through silicon interconnection for 3D Microsystems application....
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2010
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/41775 |
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