Development and characterization of deep reactive ion etching technology for through silicon interconnection

Development and characterization of deep reactive ion etching technology for through silicon interconnection

Deep reactive ion etching (DRIE) is an enabling technology for three dimensional (3D) integration of planar integrated circuits. This work focuses on various challenges associated with deep reactive ion etching technology for realizing through silicon interconnection for 3D Microsystems application....

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書目詳細資料
主要作者:	Nagarajan, Ranganathan
其他作者:	Pey Kin Leong
格式:	Theses and Dissertations
語言:	English
出版:	2010
主題:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
在線閱讀:	https://hdl.handle.net/10356/41775
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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