Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells

• المؤلف الرئيسي: Dang, Yuxing
• مؤلفون آخرون: Fan Weijun
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/4196

III-V compounds consisting of nitrogen are candidates for interband transition applications because of their small band gap due to the nitrogen (N) incoporation. In addition, there is renewed interest in their possible applications in intersubband transition based devices owing to its large conducti...