Reliability modeling for ULSI interconnects

• 主要作者: Hou, Yue Jin
• 其他作者: Tan Cher Ming
• 格式: Theses and Dissertations
• 語言: English
• 出版: 2010
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• 在線閱讀: https://hdl.handle.net/10356/42101
• 機構: Nanyang Technological University

Electromigration (EM) and stress-induced voiding (SIV) are the two major reliability concerns for metal interconnects in integrated circuits. In particular, with the dimensions of interconnect scaled into nano regime and the inclusion of low-k materials as dielectrics, the reliability aspects for on...