Investigation and analysis of 1/f noise in sub-micron NMOS devices
This thesis develops a systematic framework for the flicker noise measurement, characterization and simulation of deep sub-micron MOSFETs. In particular, the low frequency noise in 0.13 micrometer NMOS devices is investigated. The devices used throughout this project have been fabricated according t...
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/4363 |
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| Institution: | Nanyang Technological University |
| Summary: | This thesis develops a systematic framework for the flicker noise measurement, characterization and simulation of deep sub-micron MOSFETs. In particular, the low frequency noise in 0.13 micrometer NMOS devices is investigated. The devices used throughout this project have been fabricated according to the triple well 0.13 micrometer CMOS technology with different doses of
phosphorous: 1x10e13/cm2, 2x10e13/cm2 and 3x10e13/cm2 in Deep-Nwell (secondary body). |
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