Physical and electrical failure analysis of Cu/low k interconnect system

• المؤلف الرئيسي: Lau, Fu Long.
• مؤلفون آخرون: Gan Chee Lip
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/44535

Time-dependent dielectric breakdown (TDDB) is becoming one of the main reliability issues of Cu/low-k interconnect. In the study of TDDB breakdown mechanisms, a non-conventional single terminated tip test structure that provides easier failure site identification has been used. A new single terminat...