Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance

Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance

This report describes a calibration methodology for predictive simulation of sub-0.13 pm technology CMOS device’s performance. It provides an introduction to TCAD simulators (TSUPREM4 and MEDICI) and reviews the physical models and parameters that are implemented in this calibration methodology. The...

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Main Author: Leong, Vincent Kum Woh.
Other Authors: Zhu, Weiguang
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:http://hdl.handle.net/10356/4595
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-45952023-07-04T15:29:08Z Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance Leong, Vincent Kum Woh. Zhu, Weiguang School of Electrical and Electronic Engineering Benistant, Francis DRNTU::Engineering::Electrical and electronic engineering::Microelectronics This report describes a calibration methodology for predictive simulation of sub-0.13 pm technology CMOS device’s performance. It provides an introduction to TCAD simulators (TSUPREM4 and MEDICI) and reviews the physical models and parameters that are implemented in this calibration methodology. These include models and parameters for process simulation in Ion Implantation, Diffusion of Impurities, Activation of Impurities, Polycrystalline Materials Modeling and Quantum Mechanical Modeling. Models for device simulation are Shockley-Read- Hall and Auger Recombination, Lombardi Surface Mobility, Parallel Field Mobility and Modified Local Density Approximation Quantum Effect. Preparation procedures in Process Flow, Recipes, Physical Device Structures, Implantation Profiles and Grid Setting are also highlighted in order to construct reliable simulation decks. Master of Science (Microelectronics) 2008-09-17T09:54:59Z 2008-09-17T09:54:59Z 2004 2004 Thesis http://hdl.handle.net/10356/4595 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Leong, Vincent Kum Woh.
Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance
description This report describes a calibration methodology for predictive simulation of sub-0.13 pm technology CMOS device’s performance. It provides an introduction to TCAD simulators (TSUPREM4 and MEDICI) and reviews the physical models and parameters that are implemented in this calibration methodology. These include models and parameters for process simulation in Ion Implantation, Diffusion of Impurities, Activation of Impurities, Polycrystalline Materials Modeling and Quantum Mechanical Modeling. Models for device simulation are Shockley-Read- Hall and Auger Recombination, Lombardi Surface Mobility, Parallel Field Mobility and Modified Local Density Approximation Quantum Effect. Preparation procedures in Process Flow, Recipes, Physical Device Structures, Implantation Profiles and Grid Setting are also highlighted in order to construct reliable simulation decks.
author2 Zhu, Weiguang
author_facet Zhu, Weiguang
Leong, Vincent Kum Woh.
format Theses and Dissertations
author Leong, Vincent Kum Woh.
author_sort Leong, Vincent Kum Woh.
title Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance
title_short Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance
title_full Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance
title_fullStr Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance
title_full_unstemmed Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance
title_sort calibration methodology for predictive simulation of sub-0.13 technology cmos device's performance
publishDate 2008
url http://hdl.handle.net/10356/4595
_version_ 1772827756262850560

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