Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance
This report describes a calibration methodology for predictive simulation of sub-0.13 pm technology CMOS device’s performance. It provides an introduction to TCAD simulators (TSUPREM4 and MEDICI) and reviews the physical models and parameters that are implemented in this calibration methodology. The...
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| التنسيق: | Theses and Dissertations |
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2008
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| الوصول للمادة أونلاين: | http://hdl.handle.net/10356/4595 |
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sg-ntu-dr.10356-45952023-07-04T15:29:08Z Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance Leong, Vincent Kum Woh. Zhu, Weiguang School of Electrical and Electronic Engineering Benistant, Francis DRNTU::Engineering::Electrical and electronic engineering::Microelectronics This report describes a calibration methodology for predictive simulation of sub-0.13 pm technology CMOS device’s performance. It provides an introduction to TCAD simulators (TSUPREM4 and MEDICI) and reviews the physical models and parameters that are implemented in this calibration methodology. These include models and parameters for process simulation in Ion Implantation, Diffusion of Impurities, Activation of Impurities, Polycrystalline Materials Modeling and Quantum Mechanical Modeling. Models for device simulation are Shockley-Read- Hall and Auger Recombination, Lombardi Surface Mobility, Parallel Field Mobility and Modified Local Density Approximation Quantum Effect. Preparation procedures in Process Flow, Recipes, Physical Device Structures, Implantation Profiles and Grid Setting are also highlighted in order to construct reliable simulation decks. Master of Science (Microelectronics) 2008-09-17T09:54:59Z 2008-09-17T09:54:59Z 2004 2004 Thesis http://hdl.handle.net/10356/4595 Nanyang Technological University application/pdf |
| institution |
Nanyang Technological University |
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NTU Library |
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Asia |
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Singapore Singapore |
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NTU Library |
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DR-NTU |
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DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
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DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Leong, Vincent Kum Woh. Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance |
| description |
This report describes a calibration methodology for predictive simulation of sub-0.13 pm technology CMOS device’s performance. It provides an introduction to TCAD simulators (TSUPREM4 and MEDICI) and reviews the physical models and parameters that are implemented in this calibration methodology. These include models and parameters for process simulation in Ion Implantation, Diffusion of Impurities, Activation of Impurities, Polycrystalline Materials Modeling and Quantum Mechanical Modeling. Models for device simulation are Shockley-Read- Hall and Auger Recombination, Lombardi Surface Mobility, Parallel Field Mobility and Modified Local Density Approximation Quantum Effect. Preparation procedures in Process Flow, Recipes, Physical Device Structures, Implantation Profiles and Grid Setting are also highlighted in order to construct reliable simulation decks. |
| author2 |
Zhu, Weiguang |
| author_facet |
Zhu, Weiguang Leong, Vincent Kum Woh. |
| format |
Theses and Dissertations |
| author |
Leong, Vincent Kum Woh. |
| author_sort |
Leong, Vincent Kum Woh. |
| title |
Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance |
| title_short |
Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance |
| title_full |
Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance |
| title_fullStr |
Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance |
| title_full_unstemmed |
Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance |
| title_sort |
calibration methodology for predictive simulation of sub-0.13 technology cmos device's performance |
| publishDate |
2008 |
| url |
http://hdl.handle.net/10356/4595 |
| _version_ |
1772827756262850560 |