Copper metallization for deep submicron integrated circuits

• Main Author: Li, Chao Yong.
• Other Authors: Zhang, D. H.
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
• Online Access: http://hdl.handle.net/10356/4616
• Institution: Nanyang Technological University

Three types of diffusion barrier layers, Ta, TaN and multi-stacked Ta/TaN, had been employed. The properties of these barrier films and their effect on the properties of the ionized metal plasma (IMP) Cu films such as the density, surface morphology, microstructure and stress, as well as the thermal...