Characterizations of GaN-based high-electron-mobility-transistors (hemts)

• المؤلف الرئيسي: Wong, Wei Jie.
• مؤلفون آخرون: Ng Geok Ing
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/47701
• المؤسسة: Nanyang Technological University

Studies on the characteristics of AlGaN/GaN high-electron-mobility transistor (HEMTs) were performed based on the interest of understanding and evaluation of the device performance. This report will focus on the studies of drain current collapse issue on the GaN based HEMTs under the influence of di...