Characterizations of GaN-based high-electron-mobility-transistors (hemts)

• Main Author: Wong, Wei Jie.
• Other Authors: Ng Geok Ing
• Format: Final Year Project
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• Online Access: http://hdl.handle.net/10356/47701
• Institution: Nanyang Technological University

Studies on the characteristics of AlGaN/GaN high-electron-mobility transistor (HEMTs) were performed based on the interest of understanding and evaluation of the device performance. This report will focus on the studies of drain current collapse issue on the GaN based HEMTs under the influence of di...