Characterizations of GaN-based high-electron-mobility-transistors (hemts)

• 主要作者: Wong, Wei Jie.
• 其他作者: Ng Geok Ing
• 格式: Final Year Project
• 語言: English
• 出版: 2012
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• 在線閱讀: http://hdl.handle.net/10356/47701

Studies on the characteristics of AlGaN/GaN high-electron-mobility transistor (HEMTs) were performed based on the interest of understanding and evaluation of the device performance. This report will focus on the studies of drain current collapse issue on the GaN based HEMTs under the influence of di...