Wafer level electromigration reliability study of deep submicron via for multilevel metallization

The focus of this study is to compare the electromigration reliability of W-plug and Al-via in deep submicron Al-based multilevel metallization using the Wafer-level EM Test. For comparison, the results of highly accelerated wafer level EM reliability tests on Al-via and W-plug used in Al-based mult...

Full description

Saved in:

Bibliographic Details
Main Author:	Loh, Wye Boon.
Other Authors:	Tse, Man Siu
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:	http://hdl.handle.net/10356/4798
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-4798
record_format	dspace
spelling	sg-ntu-dr.10356-47982023-07-04T16:01:18Z Wafer level electromigration reliability study of deep submicron via for multilevel metallization Loh, Wye Boon. Tse, Man Siu School of Electrical and Electronic Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Microelectronics The focus of this study is to compare the electromigration reliability of W-plug and Al-via in deep submicron Al-based multilevel metallization using the Wafer-level EM Test. For comparison, the results of highly accelerated wafer level EM reliability tests on Al-via and W-plug used in Al-based multilevel metallization are reported here. Master of Engineering 2008-09-17T09:58:56Z 2008-09-17T09:58:56Z 2000 2000 Thesis http://hdl.handle.net/10356/4798 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Loh, Wye Boon. Wafer level electromigration reliability study of deep submicron via for multilevel metallization
description	The focus of this study is to compare the electromigration reliability of W-plug and Al-via in deep submicron Al-based multilevel metallization using the Wafer-level EM Test. For comparison, the results of highly accelerated wafer level EM reliability tests on Al-via and W-plug used in Al-based multilevel metallization are reported here.
author2	Tse, Man Siu
author_facet	Tse, Man Siu Loh, Wye Boon.
format	Theses and Dissertations
author	Loh, Wye Boon.
author_sort	Loh, Wye Boon.
title	Wafer level electromigration reliability study of deep submicron via for multilevel metallization
title_short	Wafer level electromigration reliability study of deep submicron via for multilevel metallization
title_full	Wafer level electromigration reliability study of deep submicron via for multilevel metallization
title_fullStr	Wafer level electromigration reliability study of deep submicron via for multilevel metallization
title_full_unstemmed	Wafer level electromigration reliability study of deep submicron via for multilevel metallization
title_sort	wafer level electromigration reliability study of deep submicron via for multilevel metallization
publishDate	2008
url	http://hdl.handle.net/10356/4798
_version_	1772828142576074752

Wafer level electromigration reliability study of deep submicron via for multilevel metallization

Similar Items