Wafer level electromigration reliability study of deep submicron via for multilevel metallization
The focus of this study is to compare the electromigration reliability of W-plug and Al-via in deep submicron Al-based multilevel metallization using the Wafer-level EM Test. For comparison, the results of highly accelerated wafer level EM reliability tests on Al-via and W-plug used in Al-based mult...
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Format: | Theses and Dissertations |
Published: |
2008
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Online Access: | http://hdl.handle.net/10356/4798 |
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Institution: | Nanyang Technological University |