RTS noise characterization of GaN on silicon based HEMT

• 主要作者: Xiong, Chenxi.
• 其他作者: Goh Wang Ling
• 格式: Final Year Project
• 語言: English
• 出版: 2012
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• 在線閱讀: http://hdl.handle.net/10356/49691

This project aims to investigate the RTS noise for GaN on Silicon based HEMTs for various bias voltages, and characterize the RTS noise by employing a statistical approach. By measuring the RTS noise for GaN on Silicon based HEMT under different bias voltage, we would be able to recognize the trends...