RTS noise characterization of GaN on silicon based HEMT

• Main Author: Xiong, Chenxi.
• Other Authors: Goh Wang Ling
• Format: Final Year Project
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/49691
• Institution: Nanyang Technological University

This project aims to investigate the RTS noise for GaN on Silicon based HEMTs for various bias voltages, and characterize the RTS noise by employing a statistical approach. By measuring the RTS noise for GaN on Silicon based HEMT under different bias voltage, we would be able to recognize the trends...