Deposition, characterization, and device fabrication of GaN and AlN based thin film materials

• المؤلف الرئيسي: Ashraf Uddin.
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: Research Report
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/5027
• المؤسسة: Nanyang Technological University

With the wide appealing application of GaN in electronic and optoelectronic device, many researchers had come out with innovative ways of preventing the cracks and reduction of strain at the interface. This is due to the different in CTE and approximately 16.9% lattice mismatch between GaN and Si su...