Electroplating of copper metallization of sub-micron integrated circuits

Electroplating of copper metallization of sub-micron integrated circuits

In this project, plating in electrolytes with and without additives was evaluated. The impact of these electrolytes and various plating parameters such as current density, current pulse waveforms, wafer rotation on the characteristics of the plated Cu film were studied.

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Bibliographic Details
Main Author: Law, Shao Beng.
Other Authors: Mridha, S.
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Online Access:http://hdl.handle.net/10356/5067
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Institution: Nanyang Technological University
Description
Summary:In this project, plating in electrolytes with and without additives was evaluated. The impact of these electrolytes and various plating parameters such as current density, current pulse waveforms, wafer rotation on the characteristics of the plated Cu film were studied.

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