UV Raman studies of channel stress in transistors with embedded SiGe source and drain

• المؤلف الرئيسي: Wong, Choun Pei
• مؤلفون آخرون: See Kai Hung Alex
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Humanities::Philosophy
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/50712

Channel strain engineering is important for improving the performance of metal-oxide-semiconductor (MOS) devices today. UV Raman spectroscopy is commonly used for stress measurements in microelectronics applications, but its use in channel stress studies of advanced transistors in sub-100nm nodes is...