UV Raman studies of channel stress in transistors with embedded SiGe source and drain

Channel strain engineering is important for improving the performance of metal-oxide-semiconductor (MOS) devices today. UV Raman spectroscopy is commonly used for stress measurements in microelectronics applications, but its use in channel stress studies of advanced transistors in sub-100nm nodes is...

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Bibliographic Details
Main Author: Wong, Choun Pei
Other Authors: See Kai Hung Alex
Format: Theses and Dissertations
Language:English
Published: 2012
Subjects:
Online Access:https://hdl.handle.net/10356/50712
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Institution: Nanyang Technological University
Language: English

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