UV Raman studies of channel stress in transistors with embedded SiGe source and drain
Channel strain engineering is important for improving the performance of metal-oxide-semiconductor (MOS) devices today. UV Raman spectroscopy is commonly used for stress measurements in microelectronics applications, but its use in channel stress studies of advanced transistors in sub-100nm nodes is...
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| 格式: | Theses and Dissertations |
| 語言: | English |
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2012
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| 在線閱讀: | https://hdl.handle.net/10356/50712 |
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| 機構: | Nanyang Technological University |
| 語言: | English |
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