Investigation and optimization of in-process dressing of chemical mechanical polishing
Chemical Mechanical Polishing (CMP) is the technique known to provide global planarization of topography with low post planarization slope and it is a technique to planarize the dielectric layers, which insulate the multilevel interconnect and it can reduces the topography over layer scales the conv...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Theses and Dissertations |
| Published: |
2008
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/5510 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Summary: | Chemical Mechanical Polishing (CMP) is the technique known to provide global planarization of topography with low post planarization slope and it is a technique to planarize the dielectric layers, which insulate the multilevel interconnect and it can reduces the topography over layer scales the conventional techniques. Dressing play a very important role to conditioning of polishing pads which is used in Chemical Mechanical Polishing. However it still suffering for scratches on the wafers' surface due to conditioner topography variations. These challenges call for the project to optimize the capability of the conditioners and surface topographies. The methodologies are also emphasized. |
|---|