Investigation and optimization of in-process dressing of chemical mechanical polishing

Chemical Mechanical Polishing (CMP) is the technique known to provide global planarization of topography with low post planarization slope and it is a technique to planarize the dielectric layers, which insulate the multilevel interconnect and it can reduces the topography over layer scales the conv...

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Main Author:	Zaw Moe Aung
Other Authors:	Butler, David Lee
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Manufacturing
Online Access:	http://hdl.handle.net/10356/5510
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-5510
record_format	dspace
spelling	sg-ntu-dr.10356-55102023-03-11T16:56:28Z Investigation and optimization of in-process dressing of chemical mechanical polishing Zaw Moe Aung Butler, David Lee School of Mechanical and Production Engineering DRNTU::Engineering::Manufacturing Chemical Mechanical Polishing (CMP) is the technique known to provide global planarization of topography with low post planarization slope and it is a technique to planarize the dielectric layers, which insulate the multilevel interconnect and it can reduces the topography over layer scales the conventional techniques. Dressing play a very important role to conditioning of polishing pads which is used in Chemical Mechanical Polishing. However it still suffering for scratches on the wafers' surface due to conditioner topography variations. These challenges call for the project to optimize the capability of the conditioners and surface topographies. The methodologies are also emphasized. Master of Science (Precision Engineering) 2008-09-17T10:52:23Z 2008-09-17T10:52:23Z 2003 2003 Thesis http://hdl.handle.net/10356/5510 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Manufacturing
spellingShingle	DRNTU::Engineering::Manufacturing Zaw Moe Aung Investigation and optimization of in-process dressing of chemical mechanical polishing
description	Chemical Mechanical Polishing (CMP) is the technique known to provide global planarization of topography with low post planarization slope and it is a technique to planarize the dielectric layers, which insulate the multilevel interconnect and it can reduces the topography over layer scales the conventional techniques. Dressing play a very important role to conditioning of polishing pads which is used in Chemical Mechanical Polishing. However it still suffering for scratches on the wafers' surface due to conditioner topography variations. These challenges call for the project to optimize the capability of the conditioners and surface topographies. The methodologies are also emphasized.
author2	Butler, David Lee
author_facet	Butler, David Lee Zaw Moe Aung
format	Theses and Dissertations
author	Zaw Moe Aung
author_sort	Zaw Moe Aung
title	Investigation and optimization of in-process dressing of chemical mechanical polishing
title_short	Investigation and optimization of in-process dressing of chemical mechanical polishing
title_full	Investigation and optimization of in-process dressing of chemical mechanical polishing
title_fullStr	Investigation and optimization of in-process dressing of chemical mechanical polishing
title_full_unstemmed	Investigation and optimization of in-process dressing of chemical mechanical polishing
title_sort	investigation and optimization of in-process dressing of chemical mechanical polishing
publishDate	2008
url	http://hdl.handle.net/10356/5510
_version_	1761781681967071232

Investigation and optimization of in-process dressing of chemical mechanical polishing

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