Nanoscale characterization of advanced high-κ gate dielectric stacks via scanning tunneling microscopy

• 主要作者: Yew, Kwang Sing
• 其他作者: Ang Diing Shenp
• 格式: Theses and Dissertations
• 語言: English
• 出版: 2014
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• 在線閱讀: https://hdl.handle.net/10356/61038
• 機構: Nanyang Technological University

Gate leakage is the major driving force for the integration of high-κ dielectric in the silicon-based CMOS technology at sub-45 nm nodes. By virtue of the higher dielectric constant value, high-κ metal oxide provides a physically thicker insulator in suppressing the gate leakage while achieving the...