Design of Ge/GeSi quantum well infrared photodetector

• Main Author: Xu, Yifei
• Other Authors: Fan Weijun
• Format: Final Year Project
• Language: English
• Published: 2016
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/68003
• Institution: Nanyang Technological University

The intention of the current project was the designing of a 9um quantum well-infrared photodetector using Ge/GeSi. There were some assumptions made for the calculations. Only the single band Hamiltonian Operator was used, instead of the multi-band Hamiltonian Operator. Many body effects were also no...