Design of Ge/GeSi quantum well infrared photodetector

Design of Ge/GeSi quantum well infrared photodetector

The intention of the current project was the designing of a 9um quantum well-infrared photodetector using Ge/GeSi. There were some assumptions made for the calculations. Only the single band Hamiltonian Operator was used, instead of the multi-band Hamiltonian Operator. Many body effects were also no...

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書目詳細資料
主要作者:	Xu, Yifei
其他作者:	Fan Weijun
格式:	Final Year Project
語言:	English
出版:	2016
主題:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
在線閱讀:	http://hdl.handle.net/10356/68003
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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