Design of Ge/GeSi quantum well infrared photodetector
The intention of the current project was the designing of a 9um quantum well-infrared photodetector using Ge/GeSi. There were some assumptions made for the calculations. Only the single band Hamiltonian Operator was used, instead of the multi-band Hamiltonian Operator. Many body effects were also no...
Saved in:
Main Author: | Xu, Yifei |
---|---|
Other Authors: | Fan Weijun |
Format: | Final Year Project |
Language: | English |
Published: |
2016
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/68003 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Nanoscale Si/SiGe based quantum well infrared photodetectors
by: Agarwala, Shweta
Published: (2010) -
High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm
by: Zhou, Hao, et al.
Published: (2020) -
High-performance back-illuminated Ge₀.₉₂Sn₀.₀₈/Ge multiple-quantum-well photodetector on Si platform for SWIR detection
by: Wu, Shaoteng, et al.
Published: (2021) -
Characterization of compound semiconductor for quantum well infrared photodetectors
by: Zhang, Dao Hua
Published: (2008) -
High-performance GE/GESN photodetectors in near- and mid-infrared range
by: Son, Bongkwon
Published: (2022)