Studies of traps in AlGaN/GaN high electron mobility transistors on silicon

• Main Author: Anand Mulagumoottil Jesudas
• Other Authors: Subramaniam Arulkumaran
• Format: Theses and Dissertations
• Language: English
• Published: 2016
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/69059
• Institution: Nanyang Technological University

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) are promising for high-voltage, high-frequency and high-power applications such as DC-DC convertors, cellular base stations, radar and wireless communication systems. The impressive intrinsic material parameters such as large bandgap, high s...