Studies of traps in AlGaN/GaN high electron mobility transistors on silicon

Studies of traps in AlGaN/GaN high electron mobility transistors on silicon

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) are promising for high-voltage, high-frequency and high-power applications such as DC-DC convertors, cellular base stations, radar and wireless communication systems. The impressive intrinsic material parameters such as large bandgap, high s...

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Bibliographic Details
Main Author:	Anand Mulagumoottil Jesudas
Other Authors:	Subramaniam Arulkumaran
Format:	Theses and Dissertations
Language:	English
Published:	2016
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/69059
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University
Language:	English

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