Design of 1.55 um InGaAsNBi/GaAs quantum well laser
The use of InGaAs/GaAs quantum well (QW) lasers has started to become prevalent in fiber communications. It is found that by operating at 1.55um minimal optical loss can be achieved. Bismide has been added so as to achieve the ideal 1.55um wavelength for the QW laser. Simulations with varying bismid...
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sg-ntu-dr.10356-708562023-07-07T16:47:37Z Design of 1.55 um InGaAsNBi/GaAs quantum well laser Kwan, Zi Jian Fan Weijun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering The use of InGaAs/GaAs quantum well (QW) lasers has started to become prevalent in fiber communications. It is found that by operating at 1.55um minimal optical loss can be achieved. Bismide has been added so as to achieve the ideal 1.55um wavelength for the QW laser. Simulations with varying bismide compositions have been run so as to find which bismide composition would achieve the desired 1.55um wavelength. A graph depicting the relationship between various QW widths (WW) versus the bandgap energy has been plotted. Bachelor of Engineering 2017-05-11T08:55:44Z 2017-05-11T08:55:44Z 2017 Final Year Project (FYP) http://hdl.handle.net/10356/70856 en Nanyang Technological University 36 p. application/pdf |
| institution |
Nanyang Technological University |
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| continent |
Asia |
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Singapore Singapore |
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DRNTU::Engineering::Electrical and electronic engineering |
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DRNTU::Engineering::Electrical and electronic engineering Kwan, Zi Jian Design of 1.55 um InGaAsNBi/GaAs quantum well laser |
| description |
The use of InGaAs/GaAs quantum well (QW) lasers has started to become prevalent in fiber communications. It is found that by operating at 1.55um minimal optical loss can be achieved. Bismide has been added so as to achieve the ideal 1.55um wavelength for the QW laser. Simulations with varying bismide compositions have been run so as to find which bismide composition would achieve the desired 1.55um wavelength. A graph depicting the relationship between various QW widths (WW) versus the bandgap energy has been plotted. |
| author2 |
Fan Weijun |
| author_facet |
Fan Weijun Kwan, Zi Jian |
| format |
Final Year Project |
| author |
Kwan, Zi Jian |
| author_sort |
Kwan, Zi Jian |
| title |
Design of 1.55 um InGaAsNBi/GaAs quantum well laser |
| title_short |
Design of 1.55 um InGaAsNBi/GaAs quantum well laser |
| title_full |
Design of 1.55 um InGaAsNBi/GaAs quantum well laser |
| title_fullStr |
Design of 1.55 um InGaAsNBi/GaAs quantum well laser |
| title_full_unstemmed |
Design of 1.55 um InGaAsNBi/GaAs quantum well laser |
| title_sort |
design of 1.55 um ingaasnbi/gaas quantum well laser |
| publishDate |
2017 |
| url |
http://hdl.handle.net/10356/70856 |
| _version_ |
1772829154480226304 |