Design of 1.55 um InGaAsNBi/GaAs quantum well laser

• Main Author: Kwan, Zi Jian
• Other Authors: Fan Weijun
• Format: Final Year Project
• Language: English
• Published: 2017
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/70856
• Institution: Nanyang Technological University

The use of InGaAs/GaAs quantum well (QW) lasers has started to become prevalent in fiber communications. It is found that by operating at 1.55um minimal optical loss can be achieved. Bismide has been added so as to achieve the ideal 1.55um wavelength for the QW laser. Simulations with varying bismid...