Design of 1.55 um InGaAsNBi/GaAs quantum well laser
The use of InGaAs/GaAs quantum well (QW) lasers has started to become prevalent in fiber communications. It is found that by operating at 1.55um minimal optical loss can be achieved. Bismide has been added so as to achieve the ideal 1.55um wavelength for the QW laser. Simulations with varying bismid...
Saved in:
Main Author: | Kwan, Zi Jian |
---|---|
Other Authors: | Fan Weijun |
Format: | Final Year Project |
Language: | English |
Published: |
2017
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/70856 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um
by: Chen, Ruiming
Published: (2017) -
Design 1.3 um GaAsSbN/GaAs quantum well laser diode
by: Dong, Bin
Published: (2013) -
Effect of In-segregation on subbands in GaInNAs/GaAs quantum wells emission around 1.3 and 1.55 micron
by: Dixit, V., et al.
Published: (2014) -
Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE
by: Li, Chaoyong.
Published: (2009) -
Optical characteristics of 1.55 μm GaInNAs multi-quantum wells
by: Sun, Handong, et al.
Published: (2009)