Design of 1.55 um InGaAsNBi/GaAs quantum well laser

The use of InGaAs/GaAs quantum well (QW) lasers has started to become prevalent in fiber communications. It is found that by operating at 1.55um minimal optical loss can be achieved. Bismide has been added so as to achieve the ideal 1.55um wavelength for the QW laser. Simulations with varying bismid...

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Main Author: Kwan, Zi Jian
Other Authors: Fan Weijun
Format: Final Year Project
Language:English
Published: 2017
Subjects:
Online Access:http://hdl.handle.net/10356/70856
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-708562023-07-07T16:47:37Z Design of 1.55 um InGaAsNBi/GaAs quantum well laser Kwan, Zi Jian Fan Weijun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering The use of InGaAs/GaAs quantum well (QW) lasers has started to become prevalent in fiber communications. It is found that by operating at 1.55um minimal optical loss can be achieved. Bismide has been added so as to achieve the ideal 1.55um wavelength for the QW laser. Simulations with varying bismide compositions have been run so as to find which bismide composition would achieve the desired 1.55um wavelength. A graph depicting the relationship between various QW widths (WW) versus the bandgap energy has been plotted. Bachelor of Engineering 2017-05-11T08:55:44Z 2017-05-11T08:55:44Z 2017 Final Year Project (FYP) http://hdl.handle.net/10356/70856 en Nanyang Technological University 36 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Kwan, Zi Jian
Design of 1.55 um InGaAsNBi/GaAs quantum well laser
description The use of InGaAs/GaAs quantum well (QW) lasers has started to become prevalent in fiber communications. It is found that by operating at 1.55um minimal optical loss can be achieved. Bismide has been added so as to achieve the ideal 1.55um wavelength for the QW laser. Simulations with varying bismide compositions have been run so as to find which bismide composition would achieve the desired 1.55um wavelength. A graph depicting the relationship between various QW widths (WW) versus the bandgap energy has been plotted.
author2 Fan Weijun
author_facet Fan Weijun
Kwan, Zi Jian
format Final Year Project
author Kwan, Zi Jian
author_sort Kwan, Zi Jian
title Design of 1.55 um InGaAsNBi/GaAs quantum well laser
title_short Design of 1.55 um InGaAsNBi/GaAs quantum well laser
title_full Design of 1.55 um InGaAsNBi/GaAs quantum well laser
title_fullStr Design of 1.55 um InGaAsNBi/GaAs quantum well laser
title_full_unstemmed Design of 1.55 um InGaAsNBi/GaAs quantum well laser
title_sort design of 1.55 um ingaasnbi/gaas quantum well laser
publishDate 2017
url http://hdl.handle.net/10356/70856
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