Design of 1.55 um InGaAsNBi/GaAs quantum well laser

• المؤلف الرئيسي: Kwan, Zi Jian
• مؤلفون آخرون: Fan Weijun
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2017
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/70856

The use of InGaAs/GaAs quantum well (QW) lasers has started to become prevalent in fiber communications. It is found that by operating at 1.55um minimal optical loss can be achieved. Bismide has been added so as to achieve the ideal 1.55um wavelength for the QW laser. Simulations with varying bismid...