A new unified model for channel thermal noise of deep sub-micron RFCMOS

• المؤلفون الرئيسيون: Ong, Shih Ni, Yeo, Kiat Seng, Chan, Lye Hock, Loo, Xi Sung, Boon, Chirn Chye, Do, Manh Anh, Chew, Kok Wai Johnny
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/79246; http://hdl.handle.net/10220/6349
• المؤسسة: Nanyang Technological University

A new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a 0.13μm RFCMOS technology process are compared to the channel noise directly extracted from RF noise measurements.