A new unified model for channel thermal noise of deep sub-micron RFCMOS

A new unified model for channel thermal noise of deep sub-micron RFCMOS

A new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a...

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Bibliographic Details
Main Authors: Ong, Shih Ni, Yeo, Kiat Seng, Chan, Lye Hock, Loo, Xi Sung, Boon, Chirn Chye, Do, Manh Anh, Chew, Kok Wai Johnny
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2010
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Online Access:https://hdl.handle.net/10356/79246
http://hdl.handle.net/10220/6349
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Institution: Nanyang Technological University
Language: English
Description
Summary:A new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a 0.13μm RFCMOS technology process are compared to the channel noise directly extracted from RF noise measurements.

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