A new unified model for channel thermal noise of deep sub-micron RFCMOS

• Main Authors: Ong, Shih Ni, Yeo, Kiat Seng, Chan, Lye Hock, Loo, Xi Sung, Boon, Chirn Chye, Do, Manh Anh, Chew, Kok Wai Johnny
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• Online Access: https://hdl.handle.net/10356/79246; http://hdl.handle.net/10220/6349
• Institution: Nanyang Technological University

A new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a...