A new unified model for channel thermal noise of deep sub-micron RFCMOS

A new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a...

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Main Authors:	Ong, Shih Ni, Yeo, Kiat Seng, Chan, Lye Hock, Loo, Xi Sung, Boon, Chirn Chye, Do, Manh Anh, Chew, Kok Wai Johnny
Other Authors:	School of Electrical and Electronic Engineering
Format:	Conference or Workshop Item
Language:	English
Published:	2010
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Online Access:	https://hdl.handle.net/10356/79246 http://hdl.handle.net/10220/6349
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-79246
record_format	dspace
spelling	sg-ntu-dr.10356-792462020-03-07T13:24:43Z A new unified model for channel thermal noise of deep sub-micron RFCMOS Ong, Shih Ni Yeo, Kiat Seng Chan, Lye Hock Loo, Xi Sung Boon, Chirn Chye Do, Manh Anh Chew, Kok Wai Johnny School of Electrical and Electronic Engineering IEEE International Symposium on Radio-Frequency Integration Technology (2009 : Singapore) Chartered Semiconductor Manufacturing Ltd DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits A new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a 0.13μm RFCMOS technology process are compared to the channel noise directly extracted from RF noise measurements. Published version 2010-08-24T08:36:10Z 2019-12-06T13:20:43Z 2010-08-24T08:36:10Z 2019-12-06T13:20:43Z 2009 2009 Conference Paper Ong, S. N., Yeo, K. S., Chan, L. H., Loo, X. S., Boon, C. C., Do, M. A., et al. (2009). A new unified model for channel thermal noise of deep sub-micron RFCMOS. IEEE International Symposium on Radio-Frequency Integration Technology, Singapore, 280-283. https://hdl.handle.net/10356/79246 http://hdl.handle.net/10220/6349 10.1109/RFIT.2009.5383701 en © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 4 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Ong, Shih Ni Yeo, Kiat Seng Chan, Lye Hock Loo, Xi Sung Boon, Chirn Chye Do, Manh Anh Chew, Kok Wai Johnny A new unified model for channel thermal noise of deep sub-micron RFCMOS
description	A new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a 0.13μm RFCMOS technology process are compared to the channel noise directly extracted from RF noise measurements.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Ong, Shih Ni Yeo, Kiat Seng Chan, Lye Hock Loo, Xi Sung Boon, Chirn Chye Do, Manh Anh Chew, Kok Wai Johnny
format	Conference or Workshop Item
author	Ong, Shih Ni Yeo, Kiat Seng Chan, Lye Hock Loo, Xi Sung Boon, Chirn Chye Do, Manh Anh Chew, Kok Wai Johnny
author_sort	Ong, Shih Ni
title	A new unified model for channel thermal noise of deep sub-micron RFCMOS
title_short	A new unified model for channel thermal noise of deep sub-micron RFCMOS
title_full	A new unified model for channel thermal noise of deep sub-micron RFCMOS
title_fullStr	A new unified model for channel thermal noise of deep sub-micron RFCMOS
title_full_unstemmed	A new unified model for channel thermal noise of deep sub-micron RFCMOS
title_sort	new unified model for channel thermal noise of deep sub-micron rfcmos
publishDate	2010
url	https://hdl.handle.net/10356/79246 http://hdl.handle.net/10220/6349
_version_	1681045142591504384

A new unified model for channel thermal noise of deep sub-micron RFCMOS

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