Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN

• Main Authors: Ye, Gang, Wang, Hong, Ng, Serene Lay Geok, Ji, Rong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2015
• 在線閱讀: https://hdl.handle.net/10356/81082; http://hdl.handle.net/10220/39102
• 機構: Nanyang Technological University

Atomic layer deposition (ALD) of ZrO2 on native oxide covered (untreated) and buffered oxide etchant (BOE) treated AlGaN surface was analyzed by utilizing x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy. Evidenced by Ga–O and Al–O chemical bonds by XPS, pa...