Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN

Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN

Atomic layer deposition (ALD) of ZrO2 on native oxide covered (untreated) and buffered oxide etchant (BOE) treated AlGaN surface was analyzed by utilizing x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy. Evidenced by Ga–O and Al–O chemical bonds by XPS, pa...

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Bibliographic Details
Main Authors: Ye, Gang, Wang, Hong, Ng, Serene Lay Geok, Ji, Rong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2015
Online Access:https://hdl.handle.net/10356/81082
http://hdl.handle.net/10220/39102
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/81082
http://hdl.handle.net/10220/39102

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