Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN
Atomic layer deposition (ALD) of ZrO2 on native oxide covered (untreated) and buffered oxide etchant (BOE) treated AlGaN surface was analyzed by utilizing x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy. Evidenced by Ga–O and Al–O chemical bonds by XPS, pa...
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Main Authors: | Ye, Gang, Wang, Hong, Ng, Serene Lay Geok, Ji, Rong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2015
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Online Access: | https://hdl.handle.net/10356/81082 http://hdl.handle.net/10220/39102 |
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Institution: | Nanyang Technological University |
Language: | English |
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