Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN
Atomic layer deposition (ALD) of ZrO2 on native oxide covered (untreated) and buffered oxide etchant (BOE) treated AlGaN surface was analyzed by utilizing x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy. Evidenced by Ga–O and Al–O chemical bonds by XPS, pa...
محفوظ في:
المؤلفون الرئيسيون: | Ye, Gang, Wang, Hong, Ng, Serene Lay Geok, Ji, Rong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong |
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مؤلفون آخرون: | School of Electrical and Electronic Engineering |
التنسيق: | مقال |
اللغة: | English |
منشور في: |
2015
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الوصول للمادة أونلاين: | https://hdl.handle.net/10356/81082 http://hdl.handle.net/10220/39102 |
الوسوم: |
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المؤسسة: | Nanyang Technological University |
اللغة: | English |
مواد مشابهة
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Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition
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Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition
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Band alignment between GaN and ZrO2 formed by atomic layer deposition
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Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
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منشور في: (2014) -
Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
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