Utilizing reverse short-channel effect for optimal subthreshold circuit design

• Main Authors: Kim, Tony Tae-Hyoung, Keane, John., Eom, Hanyong., Kim, Chris H.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• Online Access: https://hdl.handle.net/10356/84783; http://hdl.handle.net/10220/6341
• Institution: Nanyang Technological University

The impact of the reverse short-channel effect (RSCE) on device current is stronger in the subthreshold region due to reduced drain-induced barrier lowering (DIBL) and the exponential dependency of current on threshold voltage. This paper describes a device-size optimization method for subthreshold circuits utilizing RSCE to achieve high drive current, low device capacitance, less sensitivity to random dopant fluctuations, better subthreshold swing, and improved energy dissipation. Simulation results using ISCAS benchmark circuits show that the critical path delay, power consumption, and energy consumption can be improved by up to 10.4%, 34.4%, and 41.2%, respectively.