Utilizing reverse short-channel effect for optimal subthreshold circuit design

• المؤلفون الرئيسيون: Kim, Tony Tae-Hyoung, Keane, John., Eom, Hanyong., Kim, Chris H.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/84783; http://hdl.handle.net/10220/6341

The impact of the reverse short-channel effect (RSCE) on device current is stronger in the subthreshold region due to reduced drain-induced barrier lowering (DIBL) and the exponential dependency of current o...