Utilizing reverse short-channel effect for optimal subthreshold circuit design

The impact of the reverse short-channel effect (RSCE) on device current is stronger in the subthreshold region due to reduced drain-induced barrier lowering (DIBL) and the exponential dependency of current o...

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Main Authors:	Kim, Tony Tae-Hyoung, Keane, John., Eom, Hanyong., Kim, Chris H.
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2010
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:	https://hdl.handle.net/10356/84783 http://hdl.handle.net/10220/6341
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-84783
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spelling	sg-ntu-dr.10356-847832020-03-07T13:57:29Z Utilizing reverse short-channel effect for optimal subthreshold circuit design Kim, Tony Tae-Hyoung Keane, John. Eom, Hanyong. Kim, Chris H. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits The impact of the reverse short-channel effect (RSCE) on device current is stronger in the subthreshold region due to reduced drain-induced barrier lowering (DIBL) and the exponential dependency of current on threshold voltage. This paper describes a device-size optimization method for subthreshold circuits utilizing RSCE to achieve high drive current, low device capacitance, less sensitivity to random dopant fluctuations, better subthreshold swing, and improved energy dissipation. Simulation results using ISCAS benchmark circuits show that the critical path delay, power consumption, and energy consumption can be improved by up to 10.4%, 34.4%, and 41.2%, respectively. Published version 2010-08-23T02:50:36Z 2019-12-06T15:51:07Z 2010-08-23T02:50:36Z 2019-12-06T15:51:07Z 2007 2007 Journal Article Kim, T. H., Keane, J., Eom, H., & Kim, C. H. (2007). Utilizing reverse short-channel effect for optimal subthreshold circuit design. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 15(7), 821-828. 1063-8210 https://hdl.handle.net/10356/84783 http://hdl.handle.net/10220/6341 10.1109/TVLSI.2007.899239 en IEEE transactions on very large scale integration (VLSI) systems © 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 9 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Kim, Tony Tae-Hyoung Keane, John. Eom, Hanyong. Kim, Chris H. Utilizing reverse short-channel effect for optimal subthreshold circuit design
description	The impact of the reverse short-channel effect (RSCE) on device current is stronger in the subthreshold region due to reduced drain-induced barrier lowering (DIBL) and the exponential dependency of current on threshold voltage. This paper describes a device-size optimization method for subthreshold circuits utilizing RSCE to achieve high drive current, low device capacitance, less sensitivity to random dopant fluctuations, better subthreshold swing, and improved energy dissipation. Simulation results using ISCAS benchmark circuits show that the critical path delay, power consumption, and energy consumption can be improved by up to 10.4%, 34.4%, and 41.2%, respectively.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Kim, Tony Tae-Hyoung Keane, John. Eom, Hanyong. Kim, Chris H.
format	Article
author	Kim, Tony Tae-Hyoung Keane, John. Eom, Hanyong. Kim, Chris H.
author_sort	Kim, Tony Tae-Hyoung
title	Utilizing reverse short-channel effect for optimal subthreshold circuit design
title_short	Utilizing reverse short-channel effect for optimal subthreshold circuit design
title_full	Utilizing reverse short-channel effect for optimal subthreshold circuit design
title_fullStr	Utilizing reverse short-channel effect for optimal subthreshold circuit design
title_full_unstemmed	Utilizing reverse short-channel effect for optimal subthreshold circuit design
title_sort	utilizing reverse short-channel effect for optimal subthreshold circuit design
publishDate	2010
url	https://hdl.handle.net/10356/84783 http://hdl.handle.net/10220/6341
_version_	1681042013698392064

Utilizing reverse short-channel effect for optimal subthreshold circuit design

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