Correlation between oxide trap generation and negative-bias temperature instability

• Main Authors: Boo, A. A., Teo, Z. Q., Leong, K. C., Ang, Diing Shenp
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/85049; http://hdl.handle.net/10220/11335

Evidence shows that substantial interface degradation under negative-bias temperature (NBT) stressing does not result in any apparent oxide trap generation. The link between NBT instability and oxide trap generation is actually found in the recoverable hole-trapping component (R) of the former. When...