Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures

Small area finger test structures were designed to isolate and study the physical failure analysis of Cu/low-k system. This paper aims to study the impact of field enhancement and area scaling through the comparison of dielectric breakdown lifetime of the finger test structures and conventional comb...

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Main Authors: Gan, C. L., Tan, T. L., Ong, R. X.
Other Authors: School of Materials Science & Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/85259
http://hdl.handle.net/10220/12363
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-852592020-06-01T10:13:44Z Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures Gan, C. L. Tan, T. L. Ong, R. X. School of Materials Science & Engineering International Symposium on the Physical and Failure Analysis of Integrated Circuits (19th : 2012 : Singapore) Small area finger test structures were designed to isolate and study the physical failure analysis of Cu/low-k system. This paper aims to study the impact of field enhancement and area scaling through the comparison of dielectric breakdown lifetime of the finger test structures and conventional comb structure. It was found that the lifetime extracted from finger tests structures does not scale to comb structure by the Poisson area scaling law. Discrepancy is believed to have arisen due to the difference in field enhancement caused by the difference in shapes. Finite element modelling (FEM) simulation was performed using physical images to affirm this field enhancement effect. Finger test structure was found to suffer from a higher field enhancement compared to the comb structure, hence supporting the experimental results where extrapolation of lifetime from comb structure to small area over-estimates the lifetime. 2013-07-26T03:45:03Z 2019-12-06T16:00:31Z 2013-07-26T03:45:03Z 2019-12-06T16:00:31Z 2012 2012 Conference Paper Ong, R. X., Tan, T. L., & Gan, C. L. (2012). Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures. 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). https://hdl.handle.net/10356/85259 http://hdl.handle.net/10220/12363 10.1109/IPFA.2012.6306255 en © 2012 IEEE.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
description Small area finger test structures were designed to isolate and study the physical failure analysis of Cu/low-k system. This paper aims to study the impact of field enhancement and area scaling through the comparison of dielectric breakdown lifetime of the finger test structures and conventional comb structure. It was found that the lifetime extracted from finger tests structures does not scale to comb structure by the Poisson area scaling law. Discrepancy is believed to have arisen due to the difference in field enhancement caused by the difference in shapes. Finite element modelling (FEM) simulation was performed using physical images to affirm this field enhancement effect. Finger test structure was found to suffer from a higher field enhancement compared to the comb structure, hence supporting the experimental results where extrapolation of lifetime from comb structure to small area over-estimates the lifetime.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Gan, C. L.
Tan, T. L.
Ong, R. X.
format Conference or Workshop Item
author Gan, C. L.
Tan, T. L.
Ong, R. X.
spellingShingle Gan, C. L.
Tan, T. L.
Ong, R. X.
Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures
author_sort Gan, C. L.
title Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures
title_short Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures
title_full Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures
title_fullStr Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures
title_full_unstemmed Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures
title_sort impact of field enhancement on tddb lifetimes of cu/low-k test structures
publishDate 2013
url https://hdl.handle.net/10356/85259
http://hdl.handle.net/10220/12363
_version_ 1681058888437202944