High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser

• المؤلفون الرئيسيون: Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Zhang, Yu, Niu, Zhichuan, Tong, Cunzhu, Liu, Chongyang, Sia, Brian Jia Xu
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: Semiconductor Lasers; Quantum Wells; Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/85307; http://hdl.handle.net/10220/49198

A monolithic two-section InGaSb/AlGaAsSb single quantum well mode-locked laser (MLL) emitting at 2 μm is demonstrated. The laser is able to lase in the continuous wave mode up to 80 °C, and passive mode locking operation with a fundamental repetition frequency of ∼18.4 GHz is observed up to 60 °C. T...