Microsecond dark-exciton valley polarization memory in two-dimensional heterostructures

Microsecond dark-exciton valley polarization memory in two-dimensional heterostructures

Transition metal dichalcogenides have valley degree of freedom, which features optical selection rule and spin-valley locking, making them promising for valleytronics devices and quantum computation. For either application, a long valley polarization lifetime is crucial. Previous results showed that...

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書目詳細資料
Main Authors:	Jiang, Chongyun, Xu, Weigao, Rasmita, Abdullah, Huang, Zumeng, Li, Ke, Xiong, Qihua, Gao, Wei-bo
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2018
主題:	Heterostructures Valley
在線閱讀:	https://hdl.handle.net/10356/86493 http://hdl.handle.net/10220/46155
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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